Package / Case  

TO-247-3

Mount  

Through Hole

Mounting Type  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-247 [B]

Weight  

38.000013 g

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

600 V

Id - Continuous Drain Current  

77 A

Rds On - Drain-Source Resistance  

37 mOhms

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage  

3 V

Qg - Gate Charge  

260 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

481 W

Channel Mode  

Enhancement

Fall Time  

8 ns

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

110 ns

Typical Turn-On Delay Time  

18 ns

Unit Weight  

0.211644 oz

Number of Elements  

1

Turn Off Delay Time  

110 ns

Package  

Tube

Base Product Number  

APT77N60

Current - Continuous Drain (Id) @ 25℃  

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

481W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.6V @ 2.96mA

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT77N60BC6

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

2.25

Part Package Code  

TO-247

Drain Current-Max (ID)  

77 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

CoolMOS™

JESD-609 Code  

e1

Part Status  

Production (Last Updated: 1 month ago)

ECCN Code  

EAR99

Terminal Finish  

TIN SILVER COPPER

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Max Power Dissipation  

481 W

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

481 W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

41mOhm @ 44.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13600 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

260 nC @ 10 V

Rise Time  

27 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

77 A

JEDEC-95 Code  

TO-247

Gate to Source Voltage (Vgs)  

20 V

Drain Current-Max (Abs) (ID)  

77 A

Drain-source On Resistance-Max  

0.041 Ω

Drain to Source Breakdown Voltage  

600 V

Pulsed Drain Current-Max (IDM)  

272 A

Input Capacitance  

13.6 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1954 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

481 W

FET Feature  

-

Drain to Source Resistance  

37 mΩ

Rds On Max  

41 mΩ

Height  

5.31 mm

Length  

21.46 mm

Width  

16.26 mm

Radiation Hardening  

No

REACH SVHC  

compliant