Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

-

Mount  

Screw

Surface Mount  

YES

Number of Pins  

8

Supplier Device Package  

-

Number of Terminals  

8

Transistor Element Material  

SILICON

RoHS  

Details

Transistor Polarity  

N-Channel

Id - Continuous Drain Current  

10 A

Vds - Drain-Source Breakdown Voltage  

500 V

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 175 C

Fall Time  

4 ns

Forward Transconductance - Min  

3 mS

Pd - Power Dissipation  

910 W

Factory Pack QuantityFactory Pack Quantity  

1

Vgs - Gate-Source Voltage  

30 V

Vgs th - Gate-Source Threshold Voltage  

3.3 V

Unit Weight  

0.462535 oz

Continuous Drain Current Id  

10

Package  

Tray

Base Product Number  

ARF476

Mfr  

Microchip Technology

Product Status  

Active

Voltage Rated  

500 V

Voltage, Rating  

500 V

Number of Elements  

2

Turn Off Delay Time  

12 ns

Rds On - Drain-Source Resistance  

-

Mounting Styles  

Flange Mount

Package Style  

FLANGE MOUNT

Package Body Material  

UNSPECIFIED

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

175 °C

Rohs Code  

Yes

Manufacturer Part Number  

ARF476FL

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

2.27

Drain Current-Max (ID)  

10 A

Series  

-

Packaging  

Bulk

Pbfree Code  

No

ECCN Code  

EAR99

Type  

RF Power MOSFET

Max Operating Temperature  

175 °C

Min Operating Temperature  

-55 °C

Additional Feature  

HIGH VOLTAGE

Current Rating (Amps)  

10A

Max Power Dissipation  

910 W

Terminal Position  

DUAL

Terminal Form  

FLAT

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Current Rating  

10 A

Frequency  

128MHz

JESD-30 Code  

R-XDFM-F8

Qualification Status  

Not Qualified

Operating Frequency  

150 MHz

Configuration  

2 N-Channel (Dual) Common Source

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

910

Output Power  

900 W

Turn On Delay Time  

5.1 ns

Current - Test  

15 mA

Transistor Application  

AMPLIFIER

Test Current  

15 mA

Rise Time  

4.1 ns

Drain to Source Voltage (Vdss)  

500 V

Polarity/Channel Type  

N-CHANNEL

Operating Temperature Range  

- 55 C to + 175 C

Continuous Drain Current (ID)  

10 A

Gate to Source Voltage (Vgs)  

30 V

Gain  

15 dB

Max Frequency  

150 MHz

DS Breakdown Voltage-Min  

500 V

Channel Type  

N

Power - Output  

900W

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Noise Figure  

-

Voltage - Test  

150 V

Highest Frequency Band  

VERY HIGH FREQUENCY BAND

Test Voltage  

150 V

Lead Free  

Lead Free