Package / Case  

TO-247-3

Mounting Type  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-247 [B]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Id - Continuous Drain Current  

14 A

Rds On - Drain-Source Resistance  

870 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

145 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

625 W

Channel Mode  

Enhancement

Tradename  

Power MOS 8

Fall Time  

24 ns

Forward Transconductance - Min  

15 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

85 ns

Typical Turn-On Delay Time  

26 ns

Unit Weight  

0.211644 oz

Continuous Drain Current Id  

14

Package  

Tube

Base Product Number  

APT14M120

Current - Continuous Drain (Id) @ 25℃  

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

625W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Package Description  

ROHS COMPLIANT, TO-247, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT14M120B

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Samacsys Description  

MOSFET Power MOSFET - MOS8

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.72

Part Package Code  

TO-247AD

Drain Current-Max (ID)  

14 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

625

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2Ohm @ 7A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4765 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

145 nC @ 10 V

Rise Time  

15 ns

Drain to Source Voltage (Vdss)  

1200 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-247AD

Drain-source On Resistance-Max  

1.1 Ω

Pulsed Drain Current-Max (IDM)  

51 A

DS Breakdown Voltage-Min  

1200 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

1070 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Height  

5.31 mm

Length  

21.46 mm

Width  

16.26 mm

REACH SVHC  

unknown