Package / Case  

TO-264-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-264 [L]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

500 V

Id - Continuous Drain Current  

84 A

Rds On - Drain-Source Resistance  

55 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

2.5 V

Qg - Gate Charge  

340 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

1.135 kW

Channel Mode  

Enhancement

Fall Time  

50 ns

Forward Transconductance - Min  

65 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

155 ns

Typical Turn-On Delay Time  

60 ns

Unit Weight  

0.352740 oz

Package  

Tube

Base Product Number  

APT84F50

Current - Continuous Drain (Id) @ 25℃  

84A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1135W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

Turn Off Delay Time  

155 ns

Package Description  

TO-264, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Min  

-55 °C

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT84F50L

Turn-on Time-Max (ton)  

60 ns

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Turn-off Time-Max (toff)  

155 ns

Risk Rank  

1.52

Part Package Code  

TO-264AA

Drain Current-Max (ID)  

84 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 2 months ago)

Terminal Finish  

PURE MATTE TIN

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Max Power Dissipation  

1.135 kW

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1.135 kW

Case Connection  

DRAIN

Turn On Delay Time  

60 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

65mOhm @ 42A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

340 nC @ 10 V

Rise Time  

70 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Transistor Type  

1 N-Channel

Continuous Drain Current (ID)  

84 A

JEDEC-95 Code  

TO-264AA

Gate to Source Voltage (Vgs)  

30 V

Drain Current-Max (Abs) (ID)  

84 A

Drain-source On Resistance-Max  

0.065 Ω

Drain to Source Breakdown Voltage  

500 V

Pulsed Drain Current-Max (IDM)  

270 A

Input Capacitance  

13.5 nF

DS Breakdown Voltage-Min  

500 V

Avalanche Energy Rating (Eas)  

1845 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

1135 W

Max Junction Temperature (Tj)  

150 °C

FET Feature  

-

Drain to Source Resistance  

55 mΩ

Rds On Max  

65 mΩ

Feedback Cap-Max (Crss)  

185 pF

Power Dissipation Ambient-Max  

1135 W

Height  

29.18 mm

Radiation Hardening  

No

REACH SVHC  

unknown