Package / Case  

D3PAK-3

Mounting Type  

Surface Mount

Supplier Device Package  

D3Pak

RoHS  

Details

Mounting Styles  

SMD/SMT

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

500 V

Id - Continuous Drain Current  

30 A

Rds On - Drain-Source Resistance  

190 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

2.5 V

Qg - Gate Charge  

115 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

415 W

Channel Mode  

Enhancement

Factory Pack QuantityFactory Pack Quantity  

1

Unit Weight  

0.218699 oz

Package  

Tube

Base Product Number  

APT30F50

Current - Continuous Drain (Id) @ 25℃  

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

415W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Configuration  

Single

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

190mOhm @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4525 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

115 nC @ 10 V

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

FET Feature  

-