Package / Case  

TO-247-3

Mounting Type  

Through Hole

Supplier Device Package  

T-MAX™ [B2]

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

800 V

Id - Continuous Drain Current  

41 A

Rds On - Drain-Source Resistance  

190 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

2.5 V

Qg - Gate Charge  

260 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

1.04 kW

Channel Mode  

Enhancement

Fall Time  

60 ns

Forward Transconductance - Min  

38 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

200 ns

Typical Turn-On Delay Time  

46 ns

Unit Weight  

0.211644 oz

Continuous Drain Current Id  

41

Package  

Tube

Base Product Number  

APT38F80

Current - Continuous Drain (Id) @ 25℃  

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1040W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

1.04

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

240mOhm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

8070 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

260 nC @ 10 V

Rise Time  

65 ns

Drain to Source Voltage (Vdss)  

800 V

Vgs (Max)  

±30V

Transistor Type  

1 N-Channel

Channel Type  

N

FET Feature  

-