Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

ISOTOP-4

Mounting Type  

Chassis Mount

Mount  

Chassis Mount, Screw

Surface Mount  

NO

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Number of Terminals  

4

Transistor Element Material  

SILICON

RoHS  

Details

Collector- Emitter Voltage VCEO Max  

600 V

Collector-Emitter Saturation Voltage  

2.2 V

Continuous Collector Current at 25 C  

151 A

Gate-Emitter Leakage Current  

100 nA

Pd - Power Dissipation  

462 W

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Maximum Gate Emitter Voltage  

20 V

Mounting Styles  

SMD/SMT

Factory Pack QuantityFactory Pack Quantity  

1

Unit Weight  

2.264236 oz

Package  

Tube

Current-Collector (Ic) (Max)  

151 A

Base Product Number  

APT80GP60

Mfr  

Microchip Technology

Product Status  

Active

Collector-Emitter Breakdown Voltage  

600 V

Voltage Rating (DC)  

600 V

Package Description  

ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Turn-on Time-Nom (ton)  

87 ns

Manufacturer Package Code  

ISOTOP

Turn-off Time-Nom (toff)  

284 ns

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT80GP60J

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.53

Part Package Code  

ISOTOP

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 7®

JESD-609 Code  

e1

Pbfree Code  

Yes

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

LOW CONDUCTION LOSS

Max Power Dissipation  

462 W

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Current Rating  

151 A

Pin Count  

4

JESD-30 Code  

R-PUFM-X4

Qualification Status  

Not Qualified

Configuration  

Single

Element Configuration  

Single

Case Connection  

ISOLATED

Power - Max  

462 W

Transistor Application  

POWER CONTROL

Polarity/Channel Type  

N-CHANNEL

Input  

Standard

Collector Emitter Voltage (VCEO)  

600 V

Max Collector Current  

151 A

Current - Collector Cutoff (Max)  

1 mA

Voltage - Collector Emitter Breakdown (Max)  

600 V

Input Capacitance  

9.84 nF

Power Dissipation-Max (Abs)  

462 W

Vce(on) (Max) @ Vge, Ic  

2.7V @ 15V, 80A

Collector Current-Max (IC)  

151 A

IGBT Type  

PT

Collector-Emitter Voltage-Max  

600 V

NTC Thermistor  

No

Gate-Emitter Voltage-Max  

20 V

Input Capacitance (Cies) @ Vce  

9.84 nF @ 25 V

Product  

IGBT Silicon Modules

Radiation Hardening  

No

Lead Free  

Lead Free