Package / Case  

T-MAX-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Supplier Device Package  

T-MAX™ [B2]

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

500 V

Id - Continuous Drain Current  

75 A

Rds On - Drain-Source Resistance  

75 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

290 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

1.04 kW

Channel Mode  

Enhancement

Fall Time  

39 ns

Forward Transconductance - Min  

55 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

120 ns

Typical Turn-On Delay Time  

45 ns

Unit Weight  

0.208116 oz

Package  

Tube

Base Product Number  

APT75F50

Current - Continuous Drain (Id) @ 25℃  

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1040W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Number of Elements  

1

Turn Off Delay Time  

120 ns

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Part Status  

Production (Last Updated: 2 months ago)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Max Power Dissipation  

1.04 kW

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

1.04 kW

Turn On Delay Time  

45 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

75mOhm @ 37A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11600 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

290 nC @ 10 V

Rise Time  

55 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

75 A

Gate to Source Voltage (Vgs)  

30 V

Input Capacitance  

11.6 nF

FET Feature  

-

Rds On Max  

75 mΩ

Radiation Hardening  

No