Mounting Type  

Through Hole

Package / Case  

Axial

Surface Mount  

NO

Supplier Device Package  

Axial

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

NTE490

Manufacturer  

NTE Electronics

Package  

Bag

Current - Continuous Drain (Id) @ 25℃  

500mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

NTE Electronics, Inc

Power Dissipation (Max)  

350mW (Ta)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 1mA

Package Description  

CYLINDRICAL, O-PBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Risk Rank  

5.71

Drain Current-Max (ID)  

0.5 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

ECCN Code  

EAR99

HTS Code  

8541.21.00.95

Subcategory  

FET General Purpose Power

Technology  

MOSFET (Metal Oxide)

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

O-PBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5Ohm @ 200mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

60 pF @ 10 V

Drain to Source Voltage (Vdss)  

60 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

Drain Current-Max (Abs) (ID)  

0.5 A

Drain-source On Resistance-Max  

5 Ω

DS Breakdown Voltage-Min  

60 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

0.83 W

FET Feature  

-

REACH SVHC  

compliant