Mounting Type  

Through Hole

Package / Case  

TO-220-3

Supplier Device Package  

TO-220

Mfr  

STMicroelectronics

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

245W (Tc)

Base Product Number  

STP65N

Package Type  

TO-220

Vds - Drain-Source Breakdown Voltage  

650 V

Vgs th - Gate-Source Threshold Voltage  

4.2 V

Pd - Power Dissipation  

245 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1000

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

Qg - Gate Charge  

80 nC

Rds On - Drain-Source Resistance  

45 mOhms

RoHS  

Details

Id - Continuous Drain Current  

55 A

Series  

-

Operating Temperature  

-55°C ~ 150°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Pin Count  

3

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

45mOhm @ 28A, 10V

Vgs(th) (Max) @ Id  

4.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

4610 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs  

80 nC @ 10 V

Drain to Source Voltage (Vdss)  

650 V

Vgs (Max)  

±30V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Channel Type  

N

FET Feature  

-

Product  

MOSFET

Product Category  

MOSFET