Mounting Type  

Through Hole

Package / Case  

TO-247-4

Supplier Device Package  

TO-247-4L

Mfr  

Rohm Semiconductor

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

18V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.8V @ 30.8mA

Power Dissipation (Max)  

312W

Base Product Number  

SCT4013

MSL  

-

Continuous Drain Current Id  

105A

Vds - Drain-Source Breakdown Voltage  

750 V

Typical Turn-On Delay Time  

17 ns

Vgs th - Gate-Source Threshold Voltage  

4.8 V

Pd - Power Dissipation  

312 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 4 V, + 21 V

Factory Pack QuantityFactory Pack Quantity  

450

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Manufacturer  

ROHM Semiconductor

Brand  

ROHM Semiconductor

Qg - Gate Charge  

170 nC

Rds On - Drain-Source Resistance  

13 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

82 ns

Id - Continuous Drain Current  

105 A

Series  

-

Operating Temperature  

175°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Number of Channels  

1 Channel

Power Dissipation  

312W

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

16.9mOhm @ 58A, 18V

Input Capacitance (Ciss) (Max) @ Vds  

4580 pF @ 500 V

Gate Charge (Qg) (Max) @ Vgs  

170 nC @ 18 V

Rise Time  

32 ns

Drain to Source Voltage (Vdss)  

750 V

Vgs (Max)  

+21V, -4V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Channel Type  

N Channel

FET Feature  

-

Product Category  

MOSFET