Mounting Type  

Through Hole

Package / Case  

TO-247-3

Supplier Device Package  

TO-247N

Mfr  

Rohm Semiconductor

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

18V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.8V @ 15.4mA

Power Dissipation (Max)  

176W

Base Product Number  

SCT4026

MSL  

-

Continuous Drain Current Id  

56A

Vds - Drain-Source Breakdown Voltage  

750 V

Typical Turn-On Delay Time  

10 ns

Vgs th - Gate-Source Threshold Voltage  

4.8 V

Pd - Power Dissipation  

176 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 4 V, + 21 V

Factory Pack QuantityFactory Pack Quantity  

450

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Manufacturer  

ROHM Semiconductor

Brand  

ROHM Semiconductor

Qg - Gate Charge  

94 nC

Rds On - Drain-Source Resistance  

26 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

44 ns

Id - Continuous Drain Current  

56 A

Series  

-

Operating Temperature  

175°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Number of Channels  

1 Channel

Power Dissipation  

176W

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

34mOhm @ 29A, 18V

Input Capacitance (Ciss) (Max) @ Vds  

2320 pF @ 500 V

Gate Charge (Qg) (Max) @ Vgs  

94 nC @ 18 V

Rise Time  

39 nC

Drain to Source Voltage (Vdss)  

750 V

Vgs (Max)  

+21V, -4V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Channel Type  

N Channel

FET Feature  

-

Product Category  

MOSFET