Mounting Type  

Through Hole

Package / Case  

TO-247-4

Supplier Device Package  

TO-247-4

Mfr  

STMicroelectronics

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

480W (Tc)

Qualification  

-

Continuous Drain Current Id  

75A

Number of Elements per Chip  

1

Package Type  

TO-247-4

Vds - Drain-Source Breakdown Voltage  

650 V

Typical Turn-On Delay Time  

40 ns

Vgs th - Gate-Source Threshold Voltage  

4.75 V

Pd - Power Dissipation  

480 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 25 V, + 25 V

Unit Weight  

0.214466 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

30

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

Qg - Gate Charge  

118 nC

Rds On - Drain-Source Resistance  

36 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

130 ns

Id - Continuous Drain Current  

75 A

Series  

-

Operating Temperature  

-55°C ~ 150°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Pin Count  

4

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

480W

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

36mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id  

4.75V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5700 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs  

118 nC @ 10 V

Rise Time  

18 ns

Drain to Source Voltage (Vdss)  

650 V

Vgs (Max)  

±25V

Product Type  

MOSFET

Channel Type  

N Channel

FET Feature  

-

Product Category  

MOSFET