Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Supplier Device Package  

TO-220

Mfr  

STMicroelectronics

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 250μA

Power Dissipation (Max)  

250W (Tc)

Package Type  

TO-220

MSL  

MSL 1 - Unlimited

Qualification  

AEC-Q101

Continuous Drain Current Id  

110A

Vds - Drain-Source Breakdown Voltage  

100 V

Typical Turn-On Delay Time  

33 ns

Vgs th - Gate-Source Threshold Voltage  

4.5 V

Pd - Power Dissipation  

250 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Unit Weight  

0.067021 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

50

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

Qg - Gate Charge  

117 nC

Rds On - Drain-Source Resistance  

4.2 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

72 ns

Id - Continuous Drain Current  

110 A

Series  

-

Operating Temperature  

-55°C ~ 175°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

250W

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

4.2mOhm @ 55A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

9000 pF @ 50 V

Gate Charge (Qg) (Max) @ Vgs  

127 nC @ 10 V

Rise Time  

57 ns

Drain to Source Voltage (Vdss)  

100 V

Vgs (Max)  

±20V

Product Type  

MOSFET

Channel Type  

N

FET Feature  

-

Product Category  

MOSFET