Mounting Type  

Through Hole

Package / Case  

TO-247-3

Supplier Device Package  

TO-247-3

Mfr  

Microchip Technology

Package  

Bulk

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

113A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

20V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.7V @ 4.5mA (Typ)

Power Dissipation (Max)  

455W (Tc)

Base Product Number  

MSC017SMA

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Typical Turn-On Delay Time  

29 ns

Vgs th - Gate-Source Threshold Voltage  

2.7 V

Pd - Power Dissipation  

455 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 10 V, + 23 V

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

249 nC

Rds On - Drain-Source Resistance  

22 mOhms

Typical Turn-Off Delay Time  

51 ns

Id - Continuous Drain Current  

113 A

Series  

-

Operating Temperature  

-55°C ~ 175°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Configuration  

Single

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

22mOhm @ 40A, 20V

Input Capacitance (Ciss) (Max) @ Vds  

5280 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs  

249 nC @ 20 V

Rise Time  

13 ns

Drain to Source Voltage (Vdss)  

1200 V

Vgs (Max)  

+22V, -10V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

FET Feature  

-

Product Category  

MOSFET