Package / Case  

TO-206AA, TO-18-3 Metal Can

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-18 (TO-206AA)

Number of Terminals  

3

Transistor Element Material  

SILICON

Product Status  

Active

Package  

Bulk

Mfr  

Microchip Technology

Vds - Drain-Source Breakdown Voltage  

30 V

Pd - Power Dissipation  

500 mW

Transistor Polarity  

P-Channel

Maximum Operating Temperature  

+ 200 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Drain-Source Current at Vgs=0  

- 15 mA to - 60 mA

Mounting Styles  

Through Hole

Manufacturer  

Microchip

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

100 Ohms

Maximum Drain Gate Voltage  

30 V

RoHS  

Details

Vgs - Gate-Source Breakdown Voltage  

30 V

Gate-Source Cutoff Voltage  

3 V to 6 V

Package Description  

CYLINDRICAL, O-MBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Rohs Code  

Yes

Manufacturer Part Number  

2N5115E3

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.07

Part Package Code  

BCY

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

ECCN Code  

EAR99

Additional Feature  

HIGH RELIABILITY

HTS Code  

8541.21.00.95

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Reach Compliance Code  

compliant

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Configuration  

Single

Operating Mode  

DEPLETION MODE

Power - Max  

500 mW

FET Type  

P-Channel

Input Capacitance (Ciss) (Max) @ Vds  

25pF @ 15V

Drain to Source Voltage (Vdss)  

30 V

Polarity/Channel Type  

P-CHANNEL

Product Type  

JFETs

JEDEC-95 Code  

TO-206AA

Drain-source On Resistance-Max  

100 Ω

DS Breakdown Voltage-Min  

30 V

FET Technology  

JUNCTION

Feedback Cap-Max (Crss)  

7 pF

Current - Drain (Idss) @ Vds (Vgs=0)  

15 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id  

3 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)  

30 V

Resistance - RDS(On)  

100 Ohms

Product Category  

JFET