Lifecycle Status  

Production (Last Updated: 2 years ago)

Mounting Type  

Surface Mount

Package / Case  

SOT-563, SOT-666

Mount  

Surface Mount

Surface Mount  

YES

Supplier Device Package  

EMT6

Number of Terminals  

6

Transistor Element Material  

SILICON

Mfr  

Rohm Semiconductor

Product Status  

Active

Current-Collector (Ic) (Max)  

100mA

DC Current Gain  

80

Emitter-Collector Voltage (Max)  

50(V)

Collector Current (DC)  

0.1(A)

Typical Input Resistor  

2.2

Package Type  

EMT

Typical Resistor Ratio  

0.05

MSL  

MSL 1 - Unlimited

Qualification  

-

Transistor Polarity  

Dual PNP

Number of Elements per Chip  

2

Maximum Collector Emitter Voltage  

-50 V

Maximum DC Collector Current  

100 mA

Minimum DC Current Gain  

80

Pd - Power Dissipation  

150 mW

Maximum Operating Temperature  

+ 150 C

Factory Pack QuantityFactory Pack Quantity  

8000

Mounting Styles  

SMD/SMT

Part # Aliases  

EMB60

Manufacturer  

ROHM Semiconductor

Brand  

ROHM Semiconductor

Maximum Operating Frequency  

250 MHz

RoHS  

Details

Package Description  

ROHS COMPLIANT, EMT6, SC-107C, 6 PIN

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Transition Frequency-Nom (fT)  

250 MHz

Manufacturer Part Number  

EMB60T2R

Package Shape  

RECTANGULAR

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROHM CO LTD

Risk Rank  

2.34

Series  

-

Packaging  

Tape and Reel

ECCN Code  

EAR99

Type  

PNP

Subcategory  

Transistors

Terminal Position  

DUAL

Terminal Form  

FLAT

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

6

JESD-30 Code  

R-PDSO-F6

Output Voltage  

150 mV

Configuration  

Dual

Power Dissipation  

0.15(W)

Power - Max  

150mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

PNP

Product Type  

BJTs - Bipolar Transistors - Pre-Biased

Transistor Type  

2 PNP Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce  

80 @ 5mA, 10V

Current - Collector Cutoff (Max)  

500nA

Vce Saturation (Max) @ Ib, Ic  

150mV @ 500μA, 5mA

Voltage - Collector Emitter Breakdown (Max)  

50V

Frequency - Transition  

250MHz

Collector Current-Max (IC)  

0.1 A

DC Current Gain-Min (hFE)  

80

Resistor - Base (R1)  

2kOhms

Continuous Collector Current  

100mA

Resistor - Emitter Base (R2)  

47kOhms

Collector-Emitter Voltage-Max  

50 V

Product Category  

Bipolar Transistors - Pre-Biased