Mounting Type  

Through Hole

Package / Case  

TO-220-3

Supplier Device Package  

TO-220

Mfr  

STMicroelectronics

Package  

Tube

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

250W (Tc)

Base Product Number  

STP50

Continuous Drain Current Id  

36

Qualification  

-

Number of Elements per Chip  

1

Package Type  

TO-LL-HV

Channel Mode  

Enhancement

Vds - Drain-Source Breakdown Voltage  

650 V

Vgs th - Gate-Source Threshold Voltage  

4.75 V

Pd - Power Dissipation  

250 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 25 V, + 25 V

Unit Weight  

0.067021 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1000

Mounting Styles  

Through Hole

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

Qg - Gate Charge  

55 nC

Tradename  

MDmesh

Rds On - Drain-Source Resistance  

80 mOhms

RoHS  

Details

Id - Continuous Drain Current  

36 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Packaging  

Tube

Subcategory  

MOSFETs

Pin Count  

8

Number of Channels  

1 Channel

Power Dissipation  

250

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

80mOhm @ 18A, 10V

Vgs(th) (Max) @ Id  

4.75V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2350 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs  

55 nC @ 10 V

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±25V

Product Type  

MOSFET

Channel Type  

N Channel

FET Feature  

-

Product Category  

MOSFET