Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Surface Mount  

NO

Supplier Device Package  

TO-3P

Number of Terminals  

3

Transistor Element Material  

SILICON

Mfr  

NTE Electronics, Inc

Package  

Bag

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

125W (Tc)

Manufacturer Part Number  

NTE2393

Manufacturer  

NTE Electronics

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Risk Rank  

2.13

Drain Current-Max (ID)  

9 A

Series  

-

Operating Temperature  

150°C (TJ)

ECCN Code  

EAR99

Subcategory  

FET General Purpose Power

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

670mOhm @ 5A, 10V

Vgs(th) (Max) @ Id  

4V @ 1mA

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

Drain Current-Max (Abs) (ID)  

9 A

Drain-source On Resistance-Max  

0.7 Ω

Pulsed Drain Current-Max (IDM)  

36 A

DS Breakdown Voltage-Min  

500 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

150 W

FET Feature  

-