Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Supplier Device Package  

TO-220

Number of Terminals  

3

Transistor Element Material  

SILICON

Mfr  

NTE Electronics, Inc

Package  

Bag

Product Status  

Active

Current - Continuous Drain (Id) @ 25℃  

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

75W (Tc)

Manufacturer Part Number  

NTE67

Manufacturer  

NTE Electronics

Continuous Drain Current  

4.5(A)

Drain-Source On-Volt  

400(V)

Operating Temperature Classification  

Military

Package Type  

TO-220

Operating Temp Range  

-55C to 150C

Gate-Source Voltage (Max)  

±20(V)

Channel Mode  

Enhancement

Number of Elements  

1

Rad Hardened  

No

Mounting  

Through Hole

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Turn-off Time-Max (toff)  

90 ns

Risk Rank  

1.59

Part Package Code  

TO-220AB

Drain Current-Max (ID)  

4.5 A

Series  

-

Operating Temperature  

-55°C ~ 150°C (TJ)

ECCN Code  

EAR99

Type  

Power MOSFET

Additional Feature  

HIGH RELIABILITY

HTS Code  

8541.29.00.95

Subcategory  

FET General Purpose Power

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3 +Tab

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Polarity  

N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

75(W)

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5Ohm @ 3A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

780 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

30 nC @ 10 V

Drain to Source Voltage (Vdss)  

400 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

5.5 A

Drain-source On Resistance-Max  

1.5 Ω

Pulsed Drain Current-Max (IDM)  

18 A

DS Breakdown Voltage-Min  

400 V

Avalanche Energy Rating (Eas)  

290 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

75 W

FET Feature  

-

Power Dissipation Ambient-Max  

75 W