Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Supplier Device Package  

TO-220AB

Number of Terminals  

3

Transistor Element Material  

SILICON

Package  

Tube

Current - Continuous Drain (Id) @ 25℃  

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

onsemi

Power Dissipation (Max)  

50W (Tc)

Product Status  

Obsolete

Package Description  

ROHS COMPLIANT, TO-220, 3 PIN

Package Style  

IN-LINE

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

IRF820

Turn-on Time-Max (ton)  

137 ns

Package Shape  

RECTANGULAR

Manufacturer  

STMicroelectronics

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

STMICROELECTRONICS

Turn-off Time-Max (toff)  

245 ns

Risk Rank  

7.48

Part Package Code  

TO-220AB

Drain Current-Max (ID)  

4 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

JESD-609 Code  

e3

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH VOLTAGE

Subcategory  

FET General Purpose Power

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

3

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id  

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds  

360 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

24 nC @ 10 V

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

2.5 A

Drain-source On Resistance-Max  

3 Ω

Pulsed Drain Current-Max (IDM)  

12 A

DS Breakdown Voltage-Min  

500 V

Avalanche Energy Rating (Eas)  

210 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

50 W

FET Feature  

-

Feedback Cap-Max (Crss)  

50 pF

Power Dissipation Ambient-Max  

75 W