Factory Lead Time  

12 Weeks

Surface Mount  

NO

Number of Terminals  

3

Transistor Element Material  

SILICON

Package Description  

TO-220, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

IRF630

Turn-on Time-Max (ton)  

180 ns

Package Shape  

RECTANGULAR

Manufacturer  

STMicroelectronics

Number of Elements  

1

Part Life Cycle Code  

Active

Samacsys Description  

IRF630, N-channel MOSFET Transistor 9 A 200 V, 3-Pin TO-220

Ihs Manufacturer  

STMICROELECTRONICS

Risk Rank  

0.61

Part Package Code  

TO-220AB

Drain Current-Max (ID)  

9 A

JESD-609 Code  

e3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Subcategory  

FET General Purpose Power

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Brand Name  

STMicroelectronics

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Transistor Application  

SWITCHING

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

9 A

Drain-source On Resistance-Max  

0.4 Ω

Pulsed Drain Current-Max (IDM)  

36 A

DS Breakdown Voltage-Min  

200 V

Avalanche Energy Rating (Eas)  

160 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

75 W

Feedback Cap-Max (Crss)  

50 pF

Power Dissipation Ambient-Max  

100 W