Mounting Type  

Surface Mount

Package / Case  

SC-70, SOT-323

Surface Mount  

YES

Number of Pins  

3

Supplier Device Package  

3-MCPH

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Compliant

Turn Off Delay Time  

42 ns

Package  

Bulk

Current - Continuous Drain (Id) @ 25℃  

3A (Ta)

Mfr  

onsemi

Product Status  

Active

Package Description  

LEAD FREE, MCPH3, SC-70, 3 PIN

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

419AQ

Operating Temperature-Max  

150 °C

Manufacturer Part Number  

MCH3377-TL-E

Package Shape  

RECTANGULAR

Manufacturer  

ON Semiconductor

Number of Elements  

1

Part Life Cycle Code  

Lifetime Buy

Ihs Manufacturer  

ON SEMICONDUCTOR

Risk Rank  

5.12

Drain Current-Max (ID)  

3 A

Packaging  

Cut Tape (CT)

Series  

-

JESD-609 Code  

e6

Pbfree Code  

Yes

ECCN Code  

EAR99

Resistance  

83 mΩ

Terminal Finish  

Tin/Bismuth (Sn/Bi)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

Other Transistors

Max Power Dissipation  

1 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

DUAL

Terminal Form  

FLAT

Reach Compliance Code  

not_compliant

Pin Count  

3

JESD-30 Code  

R-PDSO-F3

Brand Name  

ON Semiconductor

Configuration  

SINGLE WITH BUILT-IN DIODE

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1 W

Turn On Delay Time  

8.1 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

83mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id  

-

Input Capacitance (Ciss) (Max) @ Vds  

375 pF @ 10 V

Gate Charge (Qg) (Max) @ Vgs  

4.6 nC @ 4.5 V

Rise Time  

26 ns

Drain to Source Voltage (Vdss)  

-20 V

Polarity/Channel Type  

P-CHANNEL

Continuous Drain Current (ID)  

3 A

Gate to Source Voltage (Vgs)  

10 V

Drain Current-Max (Abs) (ID)  

3 A

Drain-source On Resistance-Max  

0.083 Ω

Drain to Source Breakdown Voltage  

20 V

Input Capacitance  

375 pF

DS Breakdown Voltage-Min  

20 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

1 W

FET Feature  

-

Drain to Source Resistance  

83 mΩ

Rds On Max  

83 mΩ

Width  

1.6 mm

Height  

850 µm

Length  

2 mm

Radiation Hardening  

No

Lead Free  

Lead Free