Lifecycle Status  

Obsolete (Last Updated: 2 years ago)

Surface Mount  

NO

Number of Pins  

4

Number of Terminals  

3

Transistor Element Material  

SILICON

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

Manufacturer Lifecycle Status  

OBSOLETE (Last Updated: 2 years ago)

RoHS  

Compliant

Turn Off Delay Time  

14 ns

Package Description  

HALOGEN FREE AND ROHS COMPLIANT, CASE369AC-01, IPAK-3

Package Style  

IN-LINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

369

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

175 °C

Manufacturer Part Number  

NTD4963N-1G

Package Shape  

RECTANGULAR

Manufacturer  

ON Semiconductor

Part Life Cycle Code  

End Of Life

Ihs Manufacturer  

ON SEMICONDUCTOR

Risk Rank  

5.63

Drain Current-Max (ID)  

8.1 A

JESD-609 Code  

e3

Pbfree Code  

Yes

ECCN Code  

EAR99

Resistance  

9.6 MΩ

Terminal Finish  

Tin (Sn)

Max Operating Temperature  

175 °C

Min Operating Temperature  

-55 °C

Subcategory  

FET General Purpose Powers

Max Power Dissipation  

1.1 W

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

4

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Brand Name  

ON Semiconductor

Configuration  

SINGLE WITH BUILT-IN DIODE

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35.7 W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

Transistor Application  

SWITCHING

Rise Time  

20 ns

Drain to Source Voltage (Vdss)  

30 V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

10 A

Gate to Source Voltage (Vgs)  

20 V

Drain Current-Max (Abs) (ID)  

44 A

Drain-source On Resistance-Max  

0.016 Ω

Drain to Source Breakdown Voltage  

30 V

Pulsed Drain Current-Max (IDM)  

132 A

Input Capacitance  

1.035 nF

DS Breakdown Voltage-Min  

30 V

Avalanche Energy Rating (Eas)  

33.8 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

35.7 W

Drain to Source Resistance  

13.6 mΩ

Rds On Max  

9.6 mΩ

Width  

2.38 mm

Height  

7.49 mm

Length  

6.73 mm

Radiation Hardening  

No

Lead Free  

Lead Free