Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-204AA, TO-3

Surface Mount  

NO

Number of Pins  

2 +Tab

Supplier Device Package  

TO-3

Weight  

72.574779 g

Number of Terminals  

2

Transistor Element Material  

SILICON

Manufacturer Part Number  

NTE2392

Manufacturer  

NTE Electronics

Continuous Drain Current  

40(A)

Drain-Source On-Volt  

100(V)

Operating Temperature Classification  

Military

Package Type  

TO-3

Operating Temp Range  

-55C to 150C

Gate-Source Voltage (Max)  

±20(V)

Channel Mode  

Enhancement

Number of Elements  

1

Rad Hardened  

No

Mounting  

Through Hole

RoHS  

Non-Compliant

Turn Off Delay Time  

125 ns

Package  

Bag

Current - Continuous Drain (Id) @ 25℃  

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

NTE Electronics, Inc

Power Dissipation (Max)  

150W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250µA

Package Description  

FLANGE MOUNT, O-MBFM-P2

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Turn-on Time-Max (ton)  

135 ns

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Turn-off Time-Max (toff)  

225 ns

Risk Rank  

1.6

Part Package Code  

TO-204AA

Drain Current-Max (ID)  

40 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

ECCN Code  

EAR99

Type  

Power MOSFET

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

FET General Purpose Power

Max Power Dissipation  

150 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Polarity  

N

Configuration  

SINGLE WITH BUILT-IN DIODE

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150 W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

55mOhm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3000 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

120 nC @ 10 V

Drain to Source Voltage (Vdss)  

100 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

40 A

Threshold Voltage  

4 V

JEDEC-95 Code  

TO-3

Gate to Source Voltage (Vgs)  

20 V

Drain Current-Max (Abs) (ID)  

32 A

Drain-source On Resistance-Max  

0.055 Ω

Drain to Source Breakdown Voltage  

100 V

Pulsed Drain Current-Max (IDM)  

160 A

DS Breakdown Voltage-Min  

100 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

125 W

FET Feature  

-

Drain to Source Resistance  

55 mΩ

Nominal Vgs  

4 V

Power Dissipation Ambient-Max  

150 W

Width  

22.1996 mm

Height  

8.89 mm

Length  

152.4 mm

REACH SVHC  

Unknown