Package / Case  

211-07

Mounting Type  

Chassis Mount

Surface Mount  

NO

Supplier Device Package  

211-07, STYLE 1

Number of Terminals  

4

Transistor Element Material  

SILICON

Emitter-Base Voltage  

4(V)

Package Type  

CASE 211-07

Transistor Polarity  

NPN

Collector-Base Voltage  

65(V)

Category  

Bipolar RF

Collector Current (DC)  

3(A)

Number of Elements  

1

Rad Hardened  

No

Collector-Emitter Voltage  

35 V

DC Current Gain  

10

Mounting  

Screw

Emitter- Base Voltage VEBO  

4 V

Pd - Power Dissipation  

70 W

Maximum Operating Temperature  

+ 150 C

DC Collector/Base Gain hfe Min  

10

Unit Weight  

0.259230 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

20

Mounting Styles  

Screw Mount

Manufacturer  

MACOM

Brand  

MACOM

Maximum DC Collector Current  

6 A

RoHS  

Details

Collector- Emitter Voltage VCEO Max  

35 V

Product Status  

Active

Mfr  

MACOM Technology Solutions

Current-Collector (Ic) (Max)  

3A

Package  

Tray

Package Description  

FLANGE MOUNT, O-CRFM-F4

Package Style  

FLANGE MOUNT

Package Body Material  

CERAMIC, METAL-SEALED COFIRED

Manufacturer Package Code  

CASE 211-07

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

Yes

Manufacturer Part Number  

MRF426

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

M/A-COM TECHNOLOGY SOLUTIONS INC

Risk Rank  

1.37

Packaging  

Tray

Series  

-

Operating Temperature  

-

ECCN Code  

EAR99

Type  

NPN

Subcategory  

Transistors

Technology  

Si

Terminal Position  

RADIAL

Terminal Form  

FLAT

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

4

JESD-30 Code  

O-CRFM-F4

Qualification Status  

Not Qualified

Operating Frequency  

30 MHz

Configuration  

Single Dual Emitter

Power Dissipation  

70(W)

Power - Max  

25W

Transistor Application  

AMPLIFIER

Polarity/Channel Type  

NPN

Product Type  

RF Bipolar Transistors

Transistor Type  

Bipolar Power

DC Current Gain (hFE) (Min) @ Ic, Vce  

10 @ 1A, 5V

Gain  

25dB

Voltage - Collector Emitter Breakdown (Max)  

35V

Frequency - Transition  

-

Collector Current-Max (IC)  

3 A

DC Current Gain-Min (hFE)  

10

Continuous Collector Current  

3 A

Collector-Emitter Voltage-Max  

35 V

Noise Figure (dB Typ @ f)  

-

Power Gain  

25(dB)

Product Category  

RF Bipolar Transistors