Mounting Type  

Surface Mount

Package / Case  

8-SOIC (0.154, 3.90mm Width)

Surface Mount  

YES

Number of Pins  

8

Supplier Device Package  

8-SOIC

Number of Terminals  

8

Transistor Element Material  

SILICON

Package  

Bulk

Base Product Number  

MMDF2

Current - Continuous Drain (Id) @ 25℃  

2.5A

Mfr  

onsemi

Product Status  

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 250µA

Package Description  

CASE 751-07, SOIC-8

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

NOT SPECIFIED

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

CASE 751-07

Reflow Temperature-Max (s)  

30

Rohs Code  

No

Manufacturer Part Number  

MMDF2P02ER2

Package Shape  

RECTANGULAR

Manufacturer  

Rochester Electronics LLC

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROCHESTER ELECTRONICS LLC

Risk Rank  

5.35

Part Package Code  

SOT

Drain Current-Max (ID)  

2.5 A

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

Terminal Finish  

TIN LEAD

Additional Feature  

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

240

JESD-30 Code  

R-PDSO-G8

Qualification Status  

COMMERCIAL

Configuration  

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power - Max  

2W

FET Type  

2 P-Channel (Dual)

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

250mOhm @ 2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

475pF @ 16V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 10V

Drain to Source Voltage (Vdss)  

25V

Polarity/Channel Type  

P-CHANNEL

Drain-source On Resistance-Max  

0.25 Ω

Pulsed Drain Current-Max (IDM)  

13 A

DS Breakdown Voltage-Min  

25 V

Avalanche Energy Rating (Eas)  

245 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

Logic Level Gate

REACH SVHC  

unknown