ECCN (US)  

EAR99

Channel Mode  

Enhancement

Number of Elements per Chip  

2

Process Technology  

LDMOS

Maximum Drain Source Voltage (V)  

135

Maximum Gate Source Voltage (V)  

11

Maximum Gate Threshold Voltage (V)  

2.25

Maximum VSWR  

65

Maximum Gate Source Leakage Current (nA)  

140

Maximum IDSS (uA)  

1.4

Maximum Drain Source Resistance (mOhm)  

430(Typ)@6V

Typical Input Capacitance @ Vds (pF)  

116@50V

Typical Reverse Transfer Capacitance @ Vds (pF)  

0.7@50V

Typical Output Capacitance @ Vds (pF)  

37@50V

Output Power (W)  

250

Typical Power Gain (dB)  

28

Maximum Frequency (MHz)  

600

Minimum Frequency (MHz)  

10

Typical Drain Efficiency (%)  

72

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

225

Supplier Package  

CDFM

Military  

No

Mounting  

Screw

Package Height  

4.75(Max)

Package Length  

34.16(Max)

Package Width  

9.91(Max)

PCB changed  

5

Package Description  

,

Manufacturer Part Number  

BLF182XR

Manufacturer  

Ampleon

Part Life Cycle Code  

Contact Manufacturer

Ihs Manufacturer  

AMPLEON NETHERLANDS B V

Risk Rank  

5.09

Packaging  

Bulk

Part Status  

Active

Reach Compliance Code  

unknown

Pin Count  

5

Configuration  

Dual Common Source

Channel Type  

N

Mode of Operation  

Pulsed RF

RoHS Status  

RoHS Compliant