ECCN (US)  

EAR99

HTS  

8541.29.00.75

Channel Mode  

Enhancement

Number of Elements per Chip  

1

Process Technology  

LDMOS

Maximum Drain Source Voltage (V)  

65

Maximum Gate Source Voltage (V)  

13

Maximum Gate Threshold Voltage (V)  

2.25

Maximum VSWR  

10

Maximum Gate Source Leakage Current (nA)  

40

Maximum IDSS (uA)  

4.2

Maximum Drain Source Resistance (mOhm)  

52.5@6V

Typical Forward Transconductance (S)  

20.16

Output Power (W)  

250(Typ)

Typical Power Gain (dB)  

18.5

Maximum Frequency (MHz)  

2500

Minimum Frequency (MHz)  

2400

Typical Drain Efficiency (%)  

58.5

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

225

AEC Qualified  

Unknown

Supplier Package  

SOT1270-1

Military  

No

Mounting  

Surface Mount

Package Height  

4.01(Max)

Package Length  

20.7(Max)

Package Width  

9.91(Max)

PCB changed  

3

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Manufacturer Part Number  

BLC2425M9LS250

Manufacturer  

Ampleon

Part Life Cycle Code  

Contact Manufacturer

Ihs Manufacturer  

AMPLEON NETHERLANDS B V

Risk Rank  

5.76

Part Status  

Active

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3

Configuration  

Single

Channel Type  

N

Mode of Operation  

CW

RoHS Status  

RoHS Compliant