ECCN (US)  

EAR99

Channel Mode  

Depletion

Number of Elements per Chip  

2

Process Technology  

LDMOS

Maximum Drain Source Voltage (V)  

65

Maximum Gate Source Voltage (V)  

11

Maximum Gate Threshold Voltage (V)  

2.4

Maximum VSWR  

10

Maximum Gate Source Leakage Current (nA)  

50

Maximum IDSS (uA)  

1.4

Maximum Drain Source Resistance (mOhm)  

300(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)  

39@32V

Typical Reverse Transfer Capacitance @ Vds (pF)  

0.84@32V

Typical Output Capacitance @ Vds (pF)  

15@32V

Typical Forward Transconductance (S)  

3.3

Output Power (W)  

100(Typ)

Typical Power Gain (dB)  

23.5

Maximum Frequency (MHz)  

1300

Minimum Frequency (MHz)  

10

Typical Drain Efficiency (%)  

66

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

200

Supplier Package  

CDFM

Military  

No

Mounting  

Screw

Package Height  

5.2(Max)

Package Length  

29.08(Max)

Package Width  

5.97(Max)

PCB changed  

5

Part Status  

Active

Pin Count  

5

Configuration  

Dual Common Source

Channel Type  

N

Mode of Operation  

CW

RoHS Status  

RoHS Compliant