ECCN (US)  

EAR99

Channel Mode  

Enhancement

Number of Elements per Chip  

1

Process Technology  

LDMOS

Maximum Drain Source Voltage (V)  

65

Maximum Gate Source Voltage (V)  

13

Maximum Gate Threshold Voltage (V)  

2.68

Maximum VSWR  

20

Maximum Gate Source Leakage Current (nA)  

280

Maximum IDSS (uA)  

2.8

Maximum Drain Source Resistance (mOhm)  

40.5(Typ)@6.43V

Typical Forward Transconductance (S)  

22.6

Output Power (W)  

260(Typ)

Typical Power Gain (dB)  

14.4

Maximum Frequency (MHz)  

2500

Minimum Frequency (MHz)  

2400

Typical Drain Efficiency (%)  

68.7

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

225

Supplier Package  

SOT1270-1

Military  

No

Mounting  

Surface Mount

Package Height  

4.01(Max)

Package Length  

20.7(Max)

Package Width  

9.91(Max)

PCB changed  

3

Part Status  

Active

Type  

MOSFET

Pin Count  

3

Configuration  

Single

Channel Type  

N

Mode of Operation  

Pulsed RF Class-AB

RoHS Status  

RoHS Compliant