ECCN (US)  

EAR99

HTS  

8541.29.00.75

Channel Mode  

Enhancement

Number of Elements per Chip  

2

Process Technology  

LDMOS

Maximum Drain Source Voltage (V)  

135

Maximum Gate Source Voltage (V)  

11

Maximum Gate Threshold Voltage (V)  

2.25

Maximum VSWR  

65

Maximum Gate Source Leakage Current (nA)  

140

Maximum IDSS (uA)  

1.4

Maximum Drain Source Resistance (mOhm)  

140(Typ)@6V

Typical Input Capacitance @ Vds (pF)  

269@50V

Typical Reverse Transfer Capacitance @ Vds (pF)  

2.75@50V

Typical Output Capacitance @ Vds (pF)  

107@50V

Output Power (W)  

750

Maximum Frequency (MHz)  

600

Minimum Frequency (MHz)  

10

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

200

Supplier Package  

SOT-1214A

Military  

No

Mounting  

Screw

Package Height  

4.72(Max)

Package Length  

34.16(Max)

Package Width  

9.91(Max)

PCB changed  

5

Part Status  

Active

Pin Count  

5

Configuration  

Dual Common Source

Channel Type  

N

Mode of Operation  

Pulsed RF

RoHS Status  

RoHS Compliant