Surface Mount  

NO

Number of Terminals  

3

Transistor Element Material  

SILICON

Number of Elements  

1

JESD-609 Code  

e3

Terminal Finish  

Tin (Sn)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

37A

Drain-source On Resistance-Max  

0.04Ohm

Pulsed Drain Current-Max (IDM)  

149A

DS Breakdown Voltage-Min  

100V

Avalanche Energy Rating (Eas)  

31 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

RoHS Status  

RoHS Compliant

REACH SVHC  

compliant