[Numonyx]

Description

The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.

Features

■ Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and read
■ Access times: 45, 70, 90 ns
■ Programming time
– 10 μs per byte/word typical
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
– Read and program another block during erase suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh