Factory Lead Time  

18 Weeks

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Surface Mount  

NO

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

86W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2015

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

130m Ω @ 14.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

56nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

30A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Pulsed Drain Current-Max (IDM)  

80A

DS Breakdown Voltage-Min  

600V

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant