Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

53A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

62W Tc

Turn Off Delay Time  

175 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2001

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

10mOhm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

60V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

53A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

62W

Case Connection  

ISOLATED

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

10m Ω @ 26.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4120pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

112nC @ 10V

Rise Time  

230ns

Vgs (Max)  

±25V

Fall Time (Typ)  

170 ns

Continuous Drain Current (ID)  

53A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

60V

Dual Supply Voltage  

60V

Avalanche Energy Rating (Eas)  

820 mJ

Nominal Vgs  

4 V

Height  

9.19mm

Length  

10.16mm

Width  

4.7mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free