Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

30W Tc

Turn Off Delay Time  

61 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Base Part Number  

STF13

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

480m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

47nC @ 10V

Rise Time  

23ns

Vgs (Max)  

±30V

Fall Time (Typ)  

24 ns

Continuous Drain Current (ID)  

6.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

11A

Drain-source On Resistance-Max  

0.48Ohm

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

44A

Dual Supply Voltage  

500V

Avalanche Energy Rating (Eas)  

240 mJ

Nominal Vgs  

3.75 V

Width  

4.6mm

Length  

10.4mm

Height  

16.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant