Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Weight  

6.401g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

240W Tc

Turn Off Delay Time  

70 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

MATTE TIN

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

240W

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.9 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2080pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±30V

Fall Time (Typ)  

70 ns

Continuous Drain Current (ID)  

8A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

900V

Avalanche Energy Rating (Eas)  

850 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant