Lifecycle Status  

ACTIVE (Last Updated: 18 hours ago)

Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Weight  

6.401g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

198W Tc

Turn Off Delay Time  

55 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2007

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

198W

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.3 Ω @ 3A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1770pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

40nC @ 10V

Rise Time  

90ns

Vgs (Max)  

±30V

Fall Time (Typ)  

60 ns

Continuous Drain Current (ID)  

6A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

24A

Avalanche Energy Rating (Eas)  

650 mJ

Height  

18.9mm

Length  

15.8mm

Width  

5mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant