Factory Lead Time  

6 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Weight  

6.401g

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

225W Tc

Turn Off Delay Time  

122 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Series  

QFET®

Published  

2005

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.45Ohm

Terminal Finish  

Tin (Sn)

Additional Feature  

FAST SWITCHING

Voltage - Rated DC  

1kV

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

8A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

225W

Turn On Delay Time  

50 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.45 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

70nC @ 10V

Rise Time  

95ns

Drain to Source Voltage (Vdss)  

1000V

Vgs (Max)  

±30V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

8A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

1kV

Avalanche Energy Rating (Eas)  

850 mJ

Height  

18.9mm

Length  

15.8mm

Width  

5mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free